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| Datasheet File OCR Text: |
| NTE56058 thru NTE56060 TRIAC, 16A Description: The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated full-pack type package designed for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Absolute Maximum Ratings: Repetitive Peak Off-Sate Voltage, VDRM NTE56058 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56059 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current (Full Sine Wave, THS 38C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non-Repetitive Peak On-State Current, ITSM (Full Sine Wave, TJ = +125C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec I Repetitive Rate-of-Rise of On-State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (+), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/s Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate-of-rise of current should not exceed 15A/s. Electrical Characteristics: (TJ = +25C unless otherwise specfied) Parameter Static Characteristics Gate Trigger Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Latching Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Holding Current On-State Voltage Gate Trigger Voltage Off-State Leakage Current Dynamic Characteristics Critical Rate-of-Rise of Off-State Voltage Critical Rate-of-Change of Commutating Voltage Gate Controlled Turn-On Time Isolation Characteristics RMS Isolation Voltage from All 3 Pins to External Heatsink Capacitance from T2 to External Heatsink VISOL CISOL R.H. 65%, Clean and Dustfree f = 1MHz - - - 12 1500 - V pF dVD/dt VDM = 67% VDRMmax, TJ = +125C, Exponential Waveform, Gate Open 100 - - 250 20 2 - - - V/s V/s s IH VT VGT ID VD = 12V, IT = 0.1A IT = 20A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C VD = VDRMmax, TJ = +125C IL VD = 12V, IT = 0.1A IGT VD = 12V, IT = 0.1A - - - - - - - - - - - 0.25 - 5 8 10 22 7 20 8 10 6 1.2 0.7 0.4 0.1 35 35 35 70 40 60 40 60 30 1.6 1.5 - 0.5 mA mA mA mA mA mA mA mA mA V V V mA Symbol Test Conditions Min Typ Max Unit dVcom/dt VDM = 400V, TJ = +95C, ITRMS = 16A, dIcom/dt = 7.2A/ms, Gate Open tgt ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/s .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max MT1 MT2 G .531 (13.5) Min .100 (2.54) .059 (1.5) Max |
Price & Availability of NTE56060
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